发明公开
EP2850651A2 AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT
审中-公开
具有低铜蚀刻纯净水溶液用于改进的有机碎屑移除
- 专利标题： AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT
- 专利标题（中）： 具有低铜蚀刻纯净水溶液用于改进的有机碎屑移除
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申请号： EP13791242.4申请日： 2013-05-17
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公开(公告)号： EP2850651A2公开(公告)日： 2015-03-25
- 发明人: JENQ, Shrane, Ning , BOGGS, Karl, E. , LIU, Jun , THOMAS, Nicole
- 申请人： Advanced Technology Materials, Inc. , ATMI Taiwan Co., Ltd.
- 申请人地址： 7 Commerce Drive Danbury, CT 06810 US
- 专利权人： Advanced Technology Materials, Inc.,ATMI Taiwan Co., Ltd.
- 当前专利权人： Advanced Technology Materials, Inc.,ATMI Taiwan Co., Ltd.
- 当前专利权人地址： 7 Commerce Drive Danbury, CT 06810 US
- 代理机构： ABG Patentes, S.L.
- 优先权： US201261648937P 20120518; US201261695548P 20120831
- 国际公布： WO2013173743 20131121
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.
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