专利检索 ap:("Advanced Technology Materials, Inc." OR "ATMI Taiwan Co., Ltd.") AND inv:"BOGGS, Karl, E." 第 1 页

1.

发明公开
AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT 审中-公开
标题翻译：具有低铜蚀刻纯净水溶液用于改进的有机碎屑移除

公开(公告)号：EP2850651A2

公开(公告)日：2015-03-25

申请号：EP13791242.4

申请日：2013-05-17

申请人： Advanced Technology Materials, Inc. , ATMI Taiwan Co., Ltd.

发明人： JENQ, Shrane, Ning , BOGGS, Karl, E. , LIU, Jun , THOMAS, Nicole

IPC分类号： H01L21/302

CPC分类号： C11D11/0047 , C11D3/0073 , C11D7/08 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C25D5/48 , H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.