发明公开
EP2852644A1 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开
PROCESS用于产生具有化学机械抛光(CMP)的III-V材料的存在CMP组合物的半导体元件与特定的,非离子表面活性

  • 专利标题: A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT
  • 专利标题(中): PROCESS用于产生具有化学机械抛光(CMP)的III-V材料的存在CMP组合物的半导体元件与特定的,非离子表面活性
  • 申请号: EP13794728.9
    申请日: 2013-05-21
  • 公开(公告)号: EP2852644A1
    公开(公告)日: 2015-04-01
  • 发明人: NOLLER, Bastian MartenGILLOT, ChristopheFRANZ, DianaLI, Yuzhuo
  • 申请人: BASF SE
  • 申请人地址: 67056 Ludwigshafen DE
  • 专利权人: BASF SE
  • 当前专利权人: BASF SE
  • 当前专利权人地址: 67056 Ludwigshafen DE
  • 优先权: US201261650502P 20120523
  • 国际公布: WO2013175396 20131128
  • 主分类号: C09G1/02
  • IPC分类号: C09G1/02 H01L21/304 H01L21/306
A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT
摘要:
A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one lll-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.
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