发明公开
EP2867991A4 RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES
审中-公开
高频稳定与生产具有高稳频RF晶体管HOUSINGS方法RF晶体管HOUSING
- 专利标题: RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH HIGH FREQUENCY STABILIZATION FEATURES
- 专利标题(中): 高频稳定与生产具有高稳频RF晶体管HOUSINGS方法RF晶体管HOUSING
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申请号: EP13809475申请日: 2013-06-18
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公开(公告)号: EP2867991A4公开(公告)日: 2016-04-20
- 发明人: ANDRE ULF HAKAN , WOOD SIMON MAURICE
- 申请人: CREE INC
- 专利权人: CREE INC
- 当前专利权人: CREE INC
- 优先权: US201213537933 2012-06-29
- 主分类号: H03H7/38
- IPC分类号: H03H7/38 ; G01R25/00 ; H01L23/00 ; H01L23/66 ; H01L25/07 ; H01L25/16 ; H02M1/42 ; H03F1/56 ; H03F3/195 ; H03F3/21 ; H03H11/04
摘要:
A packaged RF transistor device includes: an RF transistor die including a plurality of RF transistor cells; an RF input lead coupled to the plurality of RF transistor cells; an RF output lead; and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.
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