发明公开
- 专利标题: FABRICATION OF NANOWIRE ARRAYS
- 专利标题(中): 备纳米线阵列
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申请号: EP13715062.9申请日: 2013-03-15
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公开(公告)号: EP2888047A1公开(公告)日: 2015-07-01
- 发明人: PARK, Hongkun , SHALEK, Alexander, K. , JORGOLLI, Marsela
- 申请人: President and Fellows of Harvard College
- 申请人地址: 17 Quincy Street Cambridge, MA 02138 US
- 专利权人: President and Fellows of Harvard College
- 当前专利权人: President and Fellows of Harvard College
- 当前专利权人地址: 17 Quincy Street Cambridge, MA 02138 US
- 代理机构: Hoffmann Eitle
- 优先权: US201261692017P 20120822
- 国际公布: WO2014031172 20140227
- 主分类号: B01L3/00
- IPC分类号: B01L3/00 ; B82Y5/00 ; B82Y15/00 ; C12M1/20 ; B81C1/00
摘要:
The present invention generally relates to nanowire arrays and methods of fabricating such arrays. In certain embodiments, the fabrication methods can consistently form NW arrays with reproducible configurations at nanoscale sites and produce NWs of specified heights, diameters, and densities. In some cases, the methods also allow formation of NW arrays containing barriers between regions, which would be prohibitively expensive if prepared by other methods.
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