发明公开
- 专利标题： METHOD OF PRODUCING A MICROELECTRONIC DEVICE IN A MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATE WITH ISOLATION TRENCHES PARTIALLY FORMED UNDER AN ACTIVE REGION
- 专利标题（中）： 方法生产电子器件的微型单晶半导体衬底，部分地处于一个主动区域中形成隔离沟槽
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申请号： EP12884191.3申请日： 2012-09-05
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公开(公告)号： EP2893558A1公开(公告)日： 2015-07-15
- 发明人: VINET, Maud , LOUBET, Nicolas , WACQUEZ, Romain
- 申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , STMicroelectronics, Inc.
- 申请人地址： Bâtiment le Ponant D 25 rue Leblanc 75015 Paris FR
- 专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives,STMicroelectronics, Inc.
- 当前专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives,STMicroelectronics, Inc.
- 当前专利权人地址： Bâtiment le Ponant D 25 rue Leblanc 75015 Paris FR
- 代理机构： Brevalex
- 国际公布： WO2014039033 20140313
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second monocrystalline semiconductor layer, comprising the following steps: etching a trench through the first semiconductor layer and the dielectric layer, and such that the trench delimits one active region of the microelectronic device, chemical vapor etching of the second semiconductor layer, at the level of the bottom wall of the trench, according to at least two crystalline planes of the second semiconductor layer such that an etched part of the second semiconductor layer extends under a part of the active region, filling of the trench and of said etched part of the second semiconductor layer with a dielectric material.
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