发明公开
- 专利标题： Electro-optical modulator
- 专利标题（中）： 电光调制器
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申请号： EP14160548.5申请日： 2014-03-18
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公开(公告)号： EP2908169A1公开(公告)日： 2015-08-19
- 发明人: KAMEI, Toshihiro , TAKEI, Ryohei , MORI, Masahiko , SAKAKIBARA, Youichi , FUJIKATA, Junichi
- 申请人： National Institute of Advanced Industrial Science and Technology , Photonics Electronics Technology Research Association
- 申请人地址： 3-1 Kasumigaseki 1-chome Chiyoda-ku Tokyo 100-8921 JP
- 专利权人： National Institute of Advanced Industrial Science and Technology,Photonics Electronics Technology Research Association
- 当前专利权人： National Institute of Advanced Industrial Science and Technology,Photonics Electronics Technology Research Association
- 当前专利权人地址： 3-1 Kasumigaseki 1-chome Chiyoda-ku Tokyo 100-8921 JP
- 代理机构： WSL Patentanwälte Partnerschaft mbB
- 优先权： JP2014027772 20140217
- 主分类号： G02F1/025
- IPC分类号： G02F1/025
摘要：
An object of the present invention is to provide an electro-optical modulator that allows high-speed carrier injection into a silicon-containing i-type amorphous semiconductor, particularly a-Si:H, and has little optical loss.
An electro-optical modulator comprises: a substrate 201; an optical waveguide comprising a silicon-containing i-type amorphous semiconductor 204 formed on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 are a crystalline semiconductor layer.
An electro-optical modulator comprises: a substrate 201; an optical waveguide comprising a silicon-containing i-type amorphous semiconductor 204 formed on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 are a crystalline semiconductor layer.
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