发明公开
EP2915890A1 COPPER ALLOY AND PROCESS FOR MANUFACTURING SAME
有权
KUPFERLEGIERUNG UND VERFAHREN ZU SEINER HERSTELLUNG
- 专利标题: COPPER ALLOY AND PROCESS FOR MANUFACTURING SAME
- 专利标题(中): KUPFERLEGIERUNG UND VERFAHREN ZU SEINER HERSTELLUNG
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申请号: EP13850956.7申请日: 2013-10-24
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公开(公告)号: EP2915890A1公开(公告)日: 2015-09-09
- 发明人: GOTO, Takashi , KIMURA, Hisamichi , INOUE, Akihisa , MURAMATSU, Naokuni
- 申请人: NGK Insulators, Ltd. , Tohoku University
- 申请人地址: 2-56, Suda-cho, Mizuho-ku Nagoya-city, Aichi 467-8530 JP
- 专利权人: NGK Insulators, Ltd.,Tohoku University
- 当前专利权人: NGK Insulators, Ltd.,Tohoku University
- 当前专利权人地址: 2-56, Suda-cho, Mizuho-ku Nagoya-city, Aichi 467-8530 JP
- 代理机构: Naylor, Matthew John
- 优先权: JP2012241712 20121101
- 国际公布: WO2014069318 20140508
- 主分类号: C22C9/00
- IPC分类号: C22C9/00 ; B22F1/00 ; B22F3/14 ; B22F3/24 ; C22F1/08 ; H01B1/02 ; H01B13/00 ; C22F1/00
摘要:
A copper alloy of the present invention contains 5.00 to 8.00 atomic percent of Zr and includes Cu and a Cu-Zr compound, and two phases of the Cu and the Cu-Zr compound form a mosaic-like structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 µm or less are dispersed. This copper alloy is formed by a manufacturing method including a sintering step of performing spark plasma sintering on a Cu-Zr binary system alloy powder at a temperature of 0.9Tm°C or less (Tm(°C): melting point of the alloy powder) by supply of direct-current pulse electricity, the Cu-Zr binary system alloy powder having an average grain diameter of 30 µm or less and a hypoeutectic composition which contains 5.00 to 8.00 atomic percent of Zr. The Cu-Zr compound may include at least one of Cu 5 Zr, Cu 9 Zr 2 , and Cu 8 Zr 3 .
公开/授权文献
- EP2915890B1 COPPER ALLOY AND PROCESS FOR MANUFACTURING SAME 公开/授权日:2018-06-20
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