发明公开
EP2919256A1 METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS
审中-公开
在离子束沉积工具中增加目标利用的方法
- 专利标题: METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS
- 专利标题(中): 在离子束沉积工具中增加目标利用的方法
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申请号: EP15158629.4申请日: 2015-03-11
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公开(公告)号: EP2919256A1公开(公告)日: 2015-09-16
- 发明人: Roque, Mario B. , Castro, Victor L.
- 申请人: Roque, Mario B. , Castro, Victor L.
- 申请人地址: 16 West Avenue Hicksville, NY 11801 US
- 专利权人: Roque, Mario B.,Castro, Victor L.
- 当前专利权人: Roque, Mario B.,Castro, Victor L.
- 当前专利权人地址: 16 West Avenue Hicksville, NY 11801 US
- 代理机构: Findlay, Alice Rosemary
- 优先权: US201461951192P 20140311
- 主分类号: H01J37/34
- IPC分类号: H01J37/34 ; C23C14/46
摘要:
In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt (102) and a generally circular insert (103) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.
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