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    ION BEAM SPUTTERING APPARATUS AND METHOD
    1.
    发明公开
    ION BEAM SPUTTERING APPARATUS AND METHOD 审中-公开

    公开(公告)号：EP4398283A3

    公开(公告)日：2024-11-13

    申请号：EP24166424.2

    申请日：2018-12-21

    申请人： Institute Of Geological And Nuclear Sciences Limited ,  Futter, Richard John ,  Davidson, Ryan James

    发明人： Futter, Richard John ,  Davidson, Ryan James ,  Leveneur, Jerome ,  Kennedy, John Vedamuthu

    IPC分类号： C23C14/04 ,  C23C14/14 ,  C23C14/34 ,  C23C14/46 ,  C23C14/56 ,  H01J37/34 ,  H01J37/317

    摘要： An ion beam sputtering apparatus comprising: an ion source configured to generate a hollow ion beam along a beam axis that is located in a hollow part of the beam; and a sputtering target having a target body that defines at least one target surface, the target body comprising sputterable particles, the target body being located relative to the ion source so that the ion beam hits the at least one target surface to sputter particles from the target body towards a surface of an object to be modified; wherein the target body is shaped so that the particles sputtered towards a surface to be modified are generally sputtered from the sputtering target in radially extending sputter directions relative to the beam axis, the sputter directions extending away from the beam axis; wherein an axis of the target body is substantially coaxial with the beam axis; and wherein the cross-sectional area of at least part of the target body, in a plane perpendicular to the beam axis, increases in a direction away from the ion source from a first cross-sectional area closer to the ion source than a second cross-sectional area further from the ion source, wherein the first cross-sectional area is substantially smaller than a cross-sectional area of the hollow portion of the ion beam, and wherein the second cross-sectional area is substantially larger than a cross-sectional area of an external periphery of the hollow ion beam. Also disclosed is a method of sputtering particles onto a surface to be modified and a method of sputtering particles onto an inner surface of an arcuate surface of a conduit.

    VERFAHREN UND VORRICHTUNG ZUR SPUTTER-DEPOSITION BESCHICHTUNG VON EINEM OBJEKT BELIEBIGER GEOMETRIE
    4.
    发明公开
    VERFAHREN UND VORRICHTUNG ZUR SPUTTER-DEPOSITION BESCHICHTUNG VON EINEM OBJEKT BELIEBIGER GEOMETRIE 审中-公开

    公开(公告)号：EP3591090A1

    公开(公告)日：2020-01-08

    申请号：EP18182052.3

    申请日：2018-07-05

    申请人： Justus-Liebig-Universität Gießen

    发明人： Becker, Martin ,  Chatterjee, Sangam ,  Holste, Kristof ,  Klar, Peter

    IPC分类号： C23C14/08 ,  C03C17/245 ,  C23C14/34 ,  C23C14/46 ,  G02B1/10 ,  H01J37/317

    摘要： Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Beschichtung mindestens einem Objekt beliebiger Geometrie mittels Sputter-Deposition. Es umfasst dabei verschiedene Schritte. Zunächst erfolgt in einem Schritt A die Erfassung der Form der zu beschichtenden Oberfläche und die Übermittlung der resultierenden Oberflächendaten an ein Auswertemittel. Anschließend erfolgt in einem Schritt B die Eingabe des Zielschichtdickenprofils und Übermittlung des Zielschichtdickenprofils an ein Auswertemittel. Dann erfolgt in einem Schritt C die Berechnung eines Bestrahlungsplans mit dem notwendigen Gesamtstrahlprofil mittels eines Auswertemittels, sodass die resultierende Massendichteverteilung des Beschichtungsmaterials das Zielschichtdickenprofil aus Schritt B aus den in Schritt A erfassten Oberflächendaten ergibt. Weiterhin erfolgt dabei die Übermittlung des Bestrahlungsplans an ein Steuerungsmittel. Danach geschieht in einem Schritt D die Einstellung von wenigstens zwei Ionenquellen zur Erzeugung des notwendigen Gesamtstrahlprofils zur Durchführung des Bestrahlungsplans aus Schritt C von mindestens einem Target. Abschließend erfolgt in einem Schritt E die Durchführung der Beschichtung der zu beschichtenden Oberfläche ausgehend vom Bestrahlungsplan aus Schritt C und der Einstellung der Ionenquellen aus Schritt D.

    GRID PROVIDING BEAMLET STEERING
    6.
    发明公开
    GRID PROVIDING BEAMLET STEERING 审中-公开
    与小波束转向GRID

    公开(公告)号：EP2625306A4

    公开(公告)日：2016-05-11

    申请号：EP11831472

    申请日：2011-10-04

    申请人： VEECO INSTR INC

    发明人： KAMEYAMA IKUYA

    IPC分类号： C23C14/46 ,  C23C14/34 ,  H01J27/02 ,  H01J37/08

    CPC分类号： C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

    摘要： Non-elliptical ion beams (508) and plumes (510) of sputtered material can yield a relatively uniform wear pattern on a destination target (504) and a uniform deposition of sputtered material on a substrate assembly (506). The non-elliptical ion beams (508) and plumes (510) of sputtered material impinge on rotating destination targets (504) and substrate assemblies (506). A first example ion beam grid (302) and a second example ion beam grid (304) each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids (302, 304). The beamlet steering as a whole creates a non-elliptical current density distribution within a cross- section of an ion beam (508) and generates a sputtered material plume (510) that deposits a uniform distribution of sputtered material onto a rotating substrate assembly (506).

    METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS
    7.
    发明公开
    METHOD FOR INCREASED TARGET UTILIZATION IN ION BEAM DEPOSITION TOOLS 审中-公开
    在离子束沉积工具中增加目标利用的方法

    公开(公告)号：EP2919256A1

    公开(公告)日：2015-09-16

    申请号：EP15158629.4

    申请日：2015-03-11

    申请人： Roque, Mario B. ,  Castro, Victor L.

    发明人： Roque, Mario B. ,  Castro, Victor L.

    IPC分类号： H01J37/34 ,  C23C14/46

    CPC分类号： H01J37/3002 ,  C23C14/3407 ,  C23C14/46 ,  H01J37/34 ,  H01J37/3417 ,  H01J37/3435 ,  H01J2237/3146

    摘要： In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt (102) and a generally circular insert (103) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.

    摘要翻译： 在其中离子源（101）产生指向溅射靶的束的类型的溅射沉积工具（100）中，溅射靶包括细长的外部裙部（102）和定位在其内的大体圆形的插入物（103） 裙部，裙部和插入件的表面相对共面并且形成靶的表面，裙部的细长尺寸轴向地朝向离子源定向。 在通过溅射沉积工具使用靶材期间，插入件在裙部内旋转到多个位置中的一个位置，以分布靶材围绕旋转插入件的磨损，从而增加整个靶材组件的利用率和使用寿命。

    PROCEDE DE GREFFAGE EN COUCHE PROFONDE DANS UN MATERIAU ORGANIQUE PAR UN FAISCEAU D'IONS
    9.
    发明公开
    PROCEDE DE GREFFAGE EN COUCHE PROFONDE DANS UN MATERIAU ORGANIQUE PAR UN FAISCEAU D'IONS 审中-公开
    方法进行嫁接，在A层深处的有机材料，以离子束

    公开(公告)号：EP2593500A1

    公开(公告)日：2013-05-22

    申请号：EP11741630.5

    申请日：2011-07-01

    申请人： Quertech Ingénierie

    发明人： BUSARDO, Denis

    IPC分类号： C08J7/12 ,  C23C14/46 ,  C23C14/48

    CPC分类号： B05D3/068 ,  B32B15/04 ,  C08J7/123 ,  C23C14/48 ,  Y10T428/273

    摘要： The invention relates to a method for grafting monomers (M) into a layer located deep inside an organic material by means of an ion beam (X), wherein: the dose of ions per unit of area is selected from a range of 10
    12 ions/cm
    2 to 10
    18 ions/cm
    2 so as to create a store of free radicals (1) in a large layer of between 0 and 3000 nm; and free radicals (1) of hydrophilic and/or hydrophobic and/or antibacterial monomers (M) are grafted into said store. Organic materials having water-repellant, hydrophilic, and/or antibacterial properties that are effective over a long period of time can thus be obtained.