发明公开
- 专利标题： METAL ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
- 专利标题（中）： 金属醇盐原料的薄膜形成，其制造方法薄膜与酗酒有关
-
申请号： EP13854668.4申请日： 2013-10-21
-
公开(公告)号： EP2921472A1公开(公告)日： 2015-09-23
- 发明人: SAKURAI, Atsushi , HATASE, Masako , YAMADA, Naoki , SHIRATORI, Tsubasa , SAITO, Akio , YOSHINO, Tomoharu
- 申请人： Adeka Corporation
- 申请人地址： 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 专利权人： Adeka Corporation
- 当前专利权人： Adeka Corporation
- 当前专利权人地址： 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 代理机构： Forstmeyer, Dietmar
- 优先权： JP2012249511 20121113
- 国际公布： WO2014077089 20140522
- 主分类号： C07C251/08
- IPC分类号： C07C251/08 ; C23C16/16 ; C23C16/40 ; H01L21/28 ; H01L21/285 ; C07F1/08 ; C07F15/04 ; C07F15/06
摘要：
The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
公开/授权文献
信息查询
