METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING RAW MATERIAL, AND THIN FILM PRODUCTION METHOD

    公开(公告)号:EP3677585A1

    公开(公告)日:2020-07-08

    申请号:EP18850439.3

    申请日:2018-08-09

    申请人: Adeka Corporation

    IPC分类号: C07F5/00 C23C16/18 H01L21/31

    摘要: The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

    wherein R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 2 represents an isopropyl group, a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group, R 3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 4 represents an alkyl group having 1 to 4 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom or a lutetium atom, and n represents the valence of the atom represented by M; here, when M is a lanthanum atom, R 2 is a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group.

    ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM

    公开(公告)号:EP4180417A1

    公开(公告)日:2023-05-17

    申请号:EP21837909.7

    申请日:2021-06-25

    申请人: ADEKA CORPORATION

    摘要: The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:

    where R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 3 and R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R 6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and "n" represents the valence of the atom represented by M, provided that when M represents a copper atom, R 3 and R 4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R 5 represents a hydrogen atom.

    COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
    5.
    发明公开
    COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM 审中-公开
    LINK铜为原料的薄膜和方法用于生产薄膜的形成

    公开(公告)号:EP3144293A1

    公开(公告)日:2017-03-22

    申请号:EP15793276.5

    申请日:2015-04-08

    申请人: Adeka Corporation

    摘要: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

    摘要翻译: 本发明提供由以下通式(I)表示的铜化合物。 在通式(I)中,R 1至R 3独立地表示具有1至5个碳原子数的直链或支链烷基; 这提供R 1和R 2为甲基,R 3表示直链或支链烷基具有2至5个碳原子数; 并且提供没有R.sup.1是甲基和R 2是乙基,R 3 darstellt甲基或一个直链或支链的烷基具有3至5,一种起始原料的碳原子数为形成本的薄膜 本发明包括通式(I)表示的铜化合物。 本发明可以提供具有低的熔点的铜化合物,可以以液体状态进行输送时,具有高的蒸气压,并且是容易蒸发,因此形成薄膜,该薄膜使用寻求铜化合物的起始原料 ,