发明公开
- 专利标题： METAL OXIDE TFT WITH IMPROVED TEMPERATURE STABILITY
- 专利标题（中）： 具有改进的温度稳定性金属TFT
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申请号： EP13864157.6申请日： 2013-12-12
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公开(公告)号： EP2936547A1公开(公告)日： 2015-10-28
- 发明人: SHIEH, Chan-Long , FOONG, Fatt , MUSOLF, Juergen , YU, Gang
- 申请人： CBrite Inc.
- 申请人地址： 421 Pine Avenue Goleta, CA 93117-3709 US
- 专利权人： CBrite Inc.
- 当前专利权人： CBrite Inc.
- 当前专利权人地址： 421 Pine Avenue Goleta, CA 93117-3709 US
- 代理机构： Potter Clarkson LLP
- 优先权： US201213718183 20121218
- 国际公布： WO2014099590 20140626
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.
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