发明公开
EP2937898A1 Semiconductor-on-insulator with backside heat dissipation
审中-公开
HALBLEITER-AUF-ISOLATOR MITRÜCKSEITIGERWÄRMEABLEITUNG
- 专利标题： Semiconductor-on-insulator with backside heat dissipation
- 专利标题（中）： HALBLEITER-AUF-ISOLATOR MITRÜCKSEITIGERWÄRMEABLEITUNG
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申请号： EP15171021.7申请日： 2010-07-14
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公开(公告)号： EP2937898A1公开(公告)日： 2015-10-28
- 发明人: Nygaard, Paul A. , Molin, Stuart B. , Stuber, Michael A.
- 申请人： Silanna Semiconductor U.S.A., Inc.
- 申请人地址： 4795 Eastgate Mall, Suite 100 San Diego CA 92121 US
- 专利权人： Silanna Semiconductor U.S.A., Inc.
- 当前专利权人： Silanna Semiconductor U.S.A., Inc.
- 当前专利权人地址： 4795 Eastgate Mall, Suite 100 San Diego CA 92121 US
- 代理机构： Williams, Lisa Estelle
- 优先权： US225914P 20090715
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/12 ; H01L21/336 ; H01L29/786 ; H01L21/78 ; H01L23/36
摘要：
Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.
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