The present disclosure concerns a multibit MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a freely orientable sense magnetization (211); a tunnel barrier layer (22), a synthetic antiferromagnet storage layer (23) having a first and second storage layer (231, 232); wherein the sense magnetization (211) induces a dipolar field (212) having a magnitude above a spin-flop field (H SF ) of the storage layer (23); the MRAM cell (1) further comprising aligning means for aligning the sense magnetization (211) in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell (1). The present disclosure also concerns a method for operating the multibit MRAM cell (1).