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205 条记录 (耗时 0.018 秒)

    Self-referenced TAS-MRAM cell that can be read with reduced power consumption
    5.
    发明授权
    Self-referenced TAS-MRAM cell that can be read with reduced power consumption 有权

    公开(公告)号：EP2775480B1

    公开(公告)日：2018-11-14

    申请号：EP13290046.5

    申请日：2013-03-07

    申请人： Crocus Technology S.A.

    发明人： Stainer, Quentin

    IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L43/08

    CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

    摘要： Self-referenced magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21); a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) exchange-coupling the storage layer (23) such that the storage magnetization (230) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) comprising a first sense layer (211) having a first sense magnetization (213), a second sense layer (212) having a second sense magnetization (214) and spacer layer (215) between the first and second sense layers (211, 212). The MRAM cell can be read with low power consumption.

    MAGNETORESISTIVE ELEMENT HAVING AN ADJUSTABLE MAGNETOSTRICTION AND MAGNETIC DEVICE COMPRISING THE MAGNETORESISTIVE ELEMENT
    7.
    发明公开
    MAGNETORESISTIVE ELEMENT HAVING AN ADJUSTABLE MAGNETOSTRICTION AND MAGNETIC DEVICE COMPRISING THE MAGNETORESISTIVE ELEMENT 审中-公开
    具有可调整的磁致伸缩的磁阻元件和包含磁阻元件的磁装置

    公开(公告)号：EP3217446A1

    公开(公告)日：2017-09-13

    申请号：EP16290045.0

    申请日：2016-03-10

    申请人： Crocus Technology

    发明人： Bandiera, Sébastien

    IPC分类号： H01L43/08 ,  H01F10/26 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/12

    摘要： The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contact with the storage and sense layer (21, 23); wherein the magnetoresistive element (1) further comprises a compensating ferromagnetic layer (25) having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer (21) and/or sense layer (23) is adjustable between -10 ppm et +10 ppm or more negative than -10 ppm by adjusting a thickness of the compensating ferromagnetic layer (25). The present disclosure concerns also concerns a magnetic device comprising the magnetoresistive element.

    摘要翻译： 本公开涉及磁阻元件（1），包括：具有第一存储磁致伸缩的存储层（21） 感测层（23），其具有第一感测磁致伸缩; 在存储和感测层（21,23）之间并与其接触的阻挡层（22）; 其中所述磁阻元件（1）还包括补偿铁磁层（25），所述补偿铁磁层具有与所述第一存储磁致伸缩和/或传感磁致伸缩不同的第二磁致伸缩，并且适于补偿所述第一存储磁致伸缩和/或所述第一传感磁致伸缩， 通过调节补偿铁磁层（25）的厚度，存储层（21）和/或感测层（23）的净磁致伸缩可以在-10ppm等于+ 10ppm或者比-10ppm更负。 本公开还涉及包括磁阻元件的磁性器件。

    Magnetic logic unit (MLU) cell for sensing magnetic fields with improved programmability and low reading consumption
    8.
    发明授权
    Magnetic logic unit (MLU) cell for sensing magnetic fields with improved programmability and low reading consumption 有权
    磁性逻辑单元（MLU）单元用于感测磁场，具有改进的可编程性和低读取功耗

    公开(公告)号：EP3045928B1

    公开(公告)日：2017-07-12

    申请号：EP15290014.8

    申请日：2015-01-16

    申请人： Crocus Technology

    发明人： Bandiera, Sébastien

    IPC分类号： G01R33/09

    CPC分类号： G01R33/098 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G11C11/1659 ,  G11C11/1673

    摘要： A magnetic logic unit (MLU) cell (1) for sensing magnetic fields, comprising: a magnetic tunnel junction (2) including a storage layer (23) having a storage magnetization (230, 234, 235), a sense layer (21) having a sense magnetization; a tunnel barrier layer (22) between the storage layer (23) and the sense layer (21); and a pining layer (24) pinning the storage magnetization (230, 234, 235) at a low threshold temperature and freeing it at a high threshold temperature (T H ); the sense magnetization (210) being freely alignable at the low and high threshold temperatures; the storage layer (23) inducing an exchange bias field (60) magnetically coupling the sense layer (21) such that the sense magnetization (210) tends to be aligned antiparallel or parallel to the storage magnetization (230, 234, 235); the tunnel barrier layer (22) being configured for generating an indirect exchange coupling (70) between the tunnel barrier layer (22) and the sense layer(21) providing an additional exchange bias field (71).

    摘要翻译： 1。一种用于感测磁场的磁性逻辑单元（MLU）单元（1），包括：磁隧道结（2），包括具有存储磁化（230,234,235）的存储层（23），感测层（21） 具有感应磁化; 在存储层（23）和感测层（21）之间的隧道势垒层（22）; 以及在低阈值温度下钉扎存储磁化强度（230,234,235）并且在高阈值温度（T H）下释放存储磁化强度的钉层（24）。 感应磁化强度（210）在低和高阈值温度下可自由对准; 所述存储层（23）引起交换偏置场（60），所述交换偏置场磁性地耦合所述感测层（21），使得所述感测磁化（210）倾向于反平行或平行于所述存储磁化（230,234,235）对齐; 所述隧道势垒层（22）被配置用于在所述隧道势垒层（22）和所述感测层（21）之间产生间接交换耦合（70），从而提供额外的交换偏置场（71）。

    SERIAL MAGNETIC LOGIC UNIT ARCHITECTURE
    9.
    发明公开
    SERIAL MAGNETIC LOGIC UNIT ARCHITECTURE 审中-公开
    ARCHITEKTURFÜRMAGNETISCHE SERIELLE LOGISCHE EINHEIT

    公开(公告)号：EP3152765A1

    公开(公告)日：2017-04-12

    申请号：EP15802692.2

    申请日：2015-06-03

    申请人： Crocus Technology Inc.

    发明人： TRAN, Thao ,  LEE, Douglas ,  CAMBOU, Bertrand

    IPC分类号： G11C19/00

    CPC分类号： G11C7/00 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0673 ,  G06F13/38

    摘要： An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.

    摘要翻译： 一种装置具有磁逻辑单元，逻辑电路被配置为在输入节点处接收串行输入位流。 来自串行输入比特流的单独的数据位被串行地写入单个磁逻辑单元，而不在输入节点和各个逻辑单元之间缓冲串行输入比特流。 串行读取来自各个逻辑单元的单独的数据位，以在输出节点上产生串行输出比特流，而不会在各个逻辑单元与输出节点之间缓冲串行输出比特流。

    Self-referenced memory device and method for operating the memory device
    10.
    发明授权
    Self-referenced memory device and method for operating the memory device 有权
    自参考存储器件及其操作所述存储器装置的方法

    公开(公告)号：EP2851903B1

    公开(公告)日：2017-03-01

    申请号：EP13290226.3

    申请日：2013-09-19

    申请人： Crocus Technology S.A.

    发明人： Bandiera, Sébastien

    IPC分类号： H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32 ,  H01L43/08

    CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A self-referenced MRAM cell (1) comprises a first portion (2') of a magnetic tunnel junction (2) including a storage layer (23); a second portion (2") of the magnetic tunnel junction portion (2) including a tunnel barrier layer (22), a sense layer (21) and a seed layer (25); the seed layer (25) comprising a material having high spin-orbit coupling such that passing a sense current (32) along the plane of the sense layer (21) and/or seed layer (25) exerts a spin-orbit torque adapted for switching a sense magnetization (210) of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.

    摘要翻译： 一种自引用MRAM单元（1）包括磁隧道结（2）包括存储层（23）的第一部分（2“）; 包括具有高的材料的籽晶层（25）;包括一个隧道阻挡层（22），感测层（21）和籽晶层（25）的磁性隧道结部分（2）的第二部分（2“） 自旋 - 轨道耦合的搜索没有使感测电流（32）沿感测层（21）和/或籽晶层（25）的平面上施加自旋轨道扭矩angepasst用于切换感测层的感测磁化（210） 一种存储器件，包括MRAM单元的多元化和用于操作存储器装置的方法，因此是游离缺失盘。