发明公开
- 专利标题： SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
- 专利标题（中）： 溅射及其制造方法
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申请号： EP14754195申请日： 2014-02-25
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公开(公告)号： EP2960355A4公开(公告)日： 2017-03-01
- 发明人: ZHANG SHOUBIN , UMEMOTO KEITA
- 申请人： MITSUBISHI MATERIALS CORP
- 专利权人： MITSUBISHI MATERIALS CORP
- 当前专利权人： MITSUBISHI MATERIALS CORP
- 优先权： JP2013034389 2013-02-25; JP2014006532 2014-01-17
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; B22F3/14 ; B22F3/15 ; C22C1/04 ; C22C9/00 ; C22C28/00 ; C22F1/00 ; C22F1/08 ; C22F1/16
摘要：
A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic% of Ga; 0.1 to 10.0 total atomic% of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.
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IPC分类:
