-
公开(公告)号：EP3187619A4
公开(公告)日：2018-04-25
申请号：EP15834975
申请日：2015-08-28
发明人： UMEMOTO KEITA , ZHANG SHOUBIN , IO KENSUKE
CPC分类号： H01J37/3426 , C22C1/04 , C22C1/0425 , C22C9/00 , C22C28/00 , C22F1/00 , C23C14/3414
摘要： A Cu-Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic% or more and 60 atomic% or less of Ga and 0.01 atomic% or more and 5 atomic% or less of K; and the Cu balance containing inevitable impurities is provided. In the Cu-Ga sputtering target, the Cu-Ga sputtering target has a region containing Cu, Ga, K, and F, in an atomic mapping image by a wavelength separation X-ray detector.
-
公开(公告)号：EP3199662A4
公开(公告)日：2018-05-02
申请号：EP15845101
申请日：2015-09-17
发明人： UMEMOTO KEITA , ZHANG SHOUBIN , URAYAMA KOUTAROU
CPC分类号： C23C14/3414 , B22F1/00 , B22F3/1007 , B22F9/082 , B22F2201/01 , B22F2301/10 , C22C1/0425 , C22C9/00 , C22C28/00 , C22C32/00 , C23C14/0623 , C23C14/14 , H01J37/3426
摘要： A sputtering target, which has a component composition including: 30.0-67.0 atomic% of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which ¸ phases made of Cu-Ga alloy are dispersed in a matrix of the ³ phases made of Cu-Ga alloy, is provided.
-
公开(公告)号：EP2960355A4
公开(公告)日：2017-03-01
申请号：EP14754195
申请日：2014-02-25
发明人： ZHANG SHOUBIN , UMEMOTO KEITA
IPC分类号： C23C14/34 , B22F3/14 , B22F3/15 , C22C1/04 , C22C9/00 , C22C28/00 , C22F1/00 , C22F1/08 , C22F1/16
CPC分类号： H01J37/3429 , B22D7/005 , B22F1/0003 , B22F3/10 , B22F9/04 , B22F2201/01 , B22F2201/10 , B22F2201/20 , B22F2301/10 , B22F2304/10 , C22C1/0433 , C22C1/0483 , C22C9/00 , C22C28/00 , C22C30/00 , C22C30/06 , C22F1/00 , C22F1/08 , C22F1/16 , C23C14/14 , C23C14/3414
摘要： A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to an all of metal elements in the sputtering target, 15.0 to 50.0 atomic% of Ga; 0.1 to 10.0 total atomic% of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities.
-
公开(公告)号：EP2818574A4
公开(公告)日：2015-11-11
申请号：EP13752289
申请日：2013-02-15
发明人： ZHANG SHOUBIN , UMEMOTO KEITA , SHOJI MASAHIRO
CPC分类号： H01J37/3429 , B22F3/10 , B22F2201/20 , B22F2301/00 , B22F2999/00 , C22C1/0425 , C22C32/0089 , C23C14/0623 , C23C14/08 , C23C14/087 , C23C14/3414 , C23C14/35 , B22F3/1007
摘要： Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at% of Ga and 1.0 to 15 at% of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm 2 or higher, and a bulk resistivity of 1 m©·cm or less. The number of 0.05 mm 2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm 2 area of the target surface is 1 or less on average.
摘要翻译： 提供了含有高浓度的Na的溅射靶，尽管如此，其抑制了变色，产生斑点，引起异常放电，并且具有高强度并且很少破裂。 还提供了溅射靶的制造方法。 溅射靶具有含有10〜40at％的Ga和1.0〜15at％的作为F，S，Se以外的金属元素的Na的组成成分，其余部分由Cu和不可避免的杂质组成，其中Na 含有选自氟化钠，硫化钠和硒化钠中的至少一种Na化合物的形式。 溅射靶的理论密度比为90％以上，弯曲强度为100N / mm 2以上，体积电阻率为1μm以下。 靶表面的每cm 2面积存在的氟化钠，硫化钠和硒化钠中的至少一种的0.05mm 2以上聚集体的数量平均为1以下。
-
-
-
搜索结果
4 条记录 (耗时 0.008 秒)
