Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and thus decreases a screen defects. The TFT (100) includes an active layer (110) and a first gate electrode (120) disposed with a gate insulator (150) therebetween, and a source electrode (130) and a drain electrode (140) respectively disposed at both ends of the active layer (110). The gate electrode (120) branches as a plurality of lines and is disposed to overlap the active layer (110). The active layer (110) includes one or more channel areas (112) disposed between the source electrode (130) and the drain electrode (140), one or more dummy areas (114), and a plurality of link areas (116) disposed between the one or more channel areas (112) to connect the one or more channel areas (112) in one pattern. A length of each of the one or more dummy areas (114) extends from an edge of a corresponding channel area (112).