THIN FILM TRANSISTOR OF DISPLAY APPARATUS
    1.
    发明公开
    THIN FILM TRANSISTOR OF DISPLAY APPARATUS 有权
    DÜNNFILMTRANSISTORFÜREINE ANZEIGEVORRICHTUNG

    公开(公告)号:EP2960943A1

    公开(公告)日:2015-12-30

    申请号:EP15173323.5

    申请日:2015-06-23

    IPC分类号: H01L29/786

    摘要: Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and thus decreases a screen defects. The TFT (100) includes an active layer (110) and a first gate electrode (120) disposed with a gate insulator (150) therebetween, and a source electrode (130) and a drain electrode (140) respectively disposed at both ends of the active layer (110). The gate electrode (120) branches as a plurality of lines and is disposed to overlap the active layer (110). The active layer (110) includes one or more channel areas (112) disposed between the source electrode (130) and the drain electrode (140), one or more dummy areas (114), and a plurality of link areas (116) disposed between the one or more channel areas (112) to connect the one or more channel areas (112) in one pattern. A length of each of the one or more dummy areas (114) extends from an edge of a corresponding channel area (112).

    摘要翻译: 公开了一种显示装置的薄膜晶体管(TFT),其减少由隆起引起的漏电流,从而减少屏幕缺陷。 TFT(100)包括在其之间设置有栅绝缘体(150)的有源层(110)和第一栅电极(120),以及分别设置在栅极绝缘体(150)的两端的源电极(130)和漏电极 有源层(110)。 栅电极(120)以多条线分支,并配置成与有源层(110)重叠。 有源层(110)包括设置在源电极(130)和漏电极(140)之间的一个或多个沟道区(112),一个或多个虚拟区(114)和多个连接区(116) 在所述一个或多个通道区域(112)之间以一种图案连接所述一个或多个通道区域(112)。 一个或多个虚拟区域(114)中的每一个的长度从对应的通道区域(112)的边缘延伸。