发明公开
EP2962336A1 A VERTICAL HALL EFFECT ELEMENT WITH STRUCTURES TO IMPROVE SENSITIVITY
审中-公开
VERTIKALES HALLEFFEKTELEMENT MIT STRUKTUREN ZUREMPFINDLICHKEITSERHÖHUNG
- 专利标题： A VERTICAL HALL EFFECT ELEMENT WITH STRUCTURES TO IMPROVE SENSITIVITY
- 专利标题（中）： VERTIKALES HALLEFFEKTELEMENT MIT STRUKTUREN ZUREMPFINDLICHKEITSERHÖHUNG
-
申请号： EP14702402.0申请日： 2014-01-16
-
公开(公告)号： EP2962336A1公开(公告)日： 2016-01-06
- 发明人: WANG, Yigong , COOPER, Richard, B.
- 申请人： Allegro Microsystems, LLC
- 申请人地址： 115 Northeast Cutoff Worcester, Massachusetts 01606 US
- 专利权人： Allegro Microsystems, LLC
- 当前专利权人： Allegro Microsystems, LLC
- 当前专利权人地址： 115 Northeast Cutoff Worcester, Massachusetts 01606 US
- 代理机构： South, Nicholas Geoffrey
- 优先权： US201313836869 20130315
- 国际公布： WO2014143404 20140918
- 主分类号： H01L43/06
- IPC分类号： H01L43/06 ; G01R33/07
摘要：
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two epi regions to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity.
公开/授权文献
信息查询
IPC分类:
