发明公开
- 专利标题： NANOCHANNEL ARRAY OF NANOWIRES FOR RESISTIVE MEMORY DEVICES
- 专利标题（中）： 纳米线进行抗存储设备NANO信道配置
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申请号： EP13884910申请日： 2013-05-15
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公开(公告)号： EP2997597A4公开(公告)日： 2017-01-18
- 发明人: WANG SHIH-YUAN , YANG JIANHUA
- 申请人： HEWLETT-PACKARD DEV COMPANY L P
- 专利权人： HEWLETT-PACKARD DEV COMPANY L P
- 当前专利权人： HEWLETT-PACKARD DEV COMPANY L P
- 优先权： US2013041069 2013-05-15
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
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