公开(公告)号：EP2997597A4

公开(公告)日：2017-01-18

申请号：EP13884910

申请日：2013-05-15

申请人： HEWLETT-PACKARD DEV COMPANY L P

发明人： WANG SHIH-YUAN ,  YANG JIANHUA

IPC分类号： H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1608

摘要： A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.

公开(公告)号：EP3084827A4

公开(公告)日：2017-12-13

申请号：EP13899348

申请日：2013-12-18

申请人： HEWLETT-PACKARD DEV COMPANY L P

发明人： GE NING ,  YANG JIANHUA ,  LI ZHIYONG

IPC分类号： H01L45/00 ,  G11C11/56

CPC分类号： G11C13/0069 ,  G11C7/04 ,  G11C11/56 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2013/008 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

摘要： A non-volatile memory element with thermal-assisted switching control is disclosed. The non-volatile memory element is disposed on a thermal inkjet resistor. Methods for manufacturing the combination and methods of using the combination are also disclosed.