发明授权
EP3016178B1 A method of forming a graphene oxide-reduced graphene oxide junction
有权
一种形成氧化石墨烯减少的氧化石墨烯结的方法
- 专利标题: A method of forming a graphene oxide-reduced graphene oxide junction
- 专利标题(中): 一种形成氧化石墨烯减少的氧化石墨烯结的方法
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申请号: EP14191045.5申请日: 2014-10-30
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公开(公告)号: EP3016178B1公开(公告)日: 2018-01-03
- 发明人: Wei, Di , Allen, Mark
- 申请人: Nokia Technologies OY
- 申请人地址: Karaportti 3 02610 Espoo FI
- 专利权人: Nokia Technologies OY
- 当前专利权人: Nokia Technologies OY
- 当前专利权人地址: Karaportti 3 02610 Espoo FI
- 代理机构: Potter Clarkson LLP
- 主分类号: H01L21/263
- IPC分类号: H01L21/263 ; H01M4/04 ; H01M6/32
摘要:
A method comprising: a deposition step comprising depositing a layer of graphene oxide; a deposition step comprising selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighbouring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.
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