公开(公告)号：EP3729492A1

公开(公告)日：2020-10-28

申请号：EP18833562.4

申请日：2018-12-14

申请人： Raytheon Company

发明人： CHENG, Kezia ,  ALAVI, Kamal, Tabatabaie ,  WILLIAMS, Adrian, D. ,  MACDONALD, Christopher, J. ,  HWANG, Kiuchul

IPC分类号： H01L21/04 ,  H01L29/45 ,  H01L21/263 ,  H01L21/285

公开(公告)号：EP2913854B1

公开(公告)日：2020-05-27

申请号：EP13848817.6

申请日：2013-09-27

申请人： Fuji Electric Co., Ltd.

发明人： ONOZAWA, Yuichi

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L21/329 ,  H01L21/336 ,  H01L29/36 ,  H01L29/32 ,  H01L29/167 ,  H01L21/263 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10

公开(公告)号：EP3467868A1

公开(公告)日：2019-04-10

申请号：EP17761425.2

申请日：2017-03-02

申请人： BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

发明人： SU, Chih-Wei

IPC分类号： H01L21/263 ,  H01L21/683

摘要： A support apparatus and a support method are provided, the support apparatus includes: a support substrate (1) for bearing a supported component (2), the support substrate (1) having a first main surface (11) facing the supported component (2) and a second main surface (12) positioned on a side opposite to the first main surface (11); and a pressure distribution plate (3), arranged on the first main surface of the support substrate and positioned between the support substrate and the supported component, wherein the pressure distribution plate is configured to bring the supported component to be separated from the support substrate. Damage to the supported component in the process of separating the supported component from the support substrate can be avoided, and product yield is improved.

公开(公告)号：EP1427002B1

公开(公告)日：2017-04-12

申请号：EP02293044.0

申请日：2002-12-06

申请人： Soitec

发明人： Letertre, Fabrice ,  Maleville, Christophe ,  Maurice, Thibaut ,  Mazure, Carlos ,  Metral, Fredéric

IPC分类号： H01L21/304 ,  H01L21/762 ,  H01L21/263 ,  H01L21/306 ,  B23K26/066 ,  B23K26/16 ,  B23K26/38 ,  B26F3/00

CPC分类号： H01L21/02032 ,  B23K26/066 ,  B23K26/38 ,  B26F3/004 ,  H01L21/76254

摘要： The present invention relates to a method for recycling a substrate, especially a wafer, said substrate having a profile with a surface and a collar, wherein an interface provided between said surface and said collar has been formed by a previous separation step, and said profile is further planarised for obtaining a plane surface. In order to provide an improved method of the above-mentioned type which allows a substrate to be reused more often and enables the recycled substrate to be produced with a low total thickness variance, wherein a good planar surface quality is obtained, it is suggested that the method comprises a severing of the collar from said surface and said interface in a separate step.

公开(公告)号：EP3016178A1

公开(公告)日：2016-05-04

申请号：EP14191045.5

申请日：2014-10-30

申请人： Nokia Technologies OY

发明人： Wei, Di ,  Allen, Mark

IPC分类号： H01M4/06 ,  H01L21/263 ,  C01B31/04

CPC分类号： H01M6/40 ,  H01L21/263 ,  H01M4/0414 ,  H01M4/583 ,  H01M6/32

摘要： A method comprising:
a deposition step comprising depositing a layer of graphene oxide;
a deposition step comprising selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighbouring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and
repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.

摘要翻译： 一种方法，包括：沉积步骤，包括沉积氧化石墨烯层; 沉积步骤，所述沉积步骤包括选择性地将所述沉积的氧化石墨烯层的区域暴露于电磁辐射以形成与未暴露的氧化石墨烯的相邻区域相邻的还原的氧化石墨烯的区域，所述氧化石墨烯和相邻的还原的氧化石墨烯区域形成其间的结以产生 氧化石墨烯减少的氧化石墨烯结层; 以及在下面的石墨烯氧化物还原的氧化石墨烯结层上重复用于一个或多个另外的各自的氧化石墨烯层的沉积和暴露步骤以产生设备，其中当氧化石墨烯氧化物还原的氧化石墨烯层的各个结时， 一起考虑，延伸到第三维。

公开(公告)号：EP2710629A1

公开(公告)日：2014-03-26

申请号：EP12721922.8

申请日：2012-05-04

申请人： Toyota Jidosha Kabushiki Kaisha ,  Kyoto University

发明人： DANNO, Katsunori ,  SAITOH, Hiroaki ,  SEKI, Akinori ,  KIMOTO, tsunenobu

IPC分类号： H01L21/322 ,  H01L29/872 ,  H01L29/868 ,  H01L21/263 ,  H01L21/265 ,  H01L29/16

CPC分类号： H01L29/1608 ,  H01L21/02529 ,  H01L21/046 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/322 ,  H01L21/324 ,  H01L29/868 ,  H01L29/872

摘要： A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

摘要翻译： 一种制造半导体器件的工艺包括：在SiC衬底上形成SiC外延层; 用离子注入外延层; 形成具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层; 并在外延层上进行热处理。 该半导体器件包括SiC衬底，在SiC衬底上形成的SiC外延层以及具有比SiC衬底的缺陷密度更高的缺陷密度的吸杂层。

公开(公告)号：EP1125322B1

公开(公告)日：2013-12-11

申请号：EP99957875.0

申请日：1999-10-11

申请人： Infineon Technologies Bipolar GmbH & Co. KG

发明人： SCHULZE, Hans-Joachim ,  RUFF, Martin

IPC分类号： H01L21/332 ,  H01L29/74 ,  H01L29/32 ,  H01L21/263

CPC分类号： H01L29/66363 ,  H01L21/263 ,  H01L29/32 ,  H01L29/7404

公开(公告)号：EP2577745A2

公开(公告)日：2013-04-10

申请号：EP11721926.1

申请日：2011-05-16

申请人： Suniva, Inc.

发明人： ROHATGI, Ajeet ,  YELUNDUR, Vijay ,  CHANDRASEKARAN, Vinodh ,  DAVIS, Hubert, Preston ,  DAMIANI, Ben

IPC分类号： H01L31/068 ,  H01L21/263 ,  H01L31/18 ,  H01L21/266 ,  H01L21/265

CPC分类号： H01L31/1804 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

公开(公告)号：EP2482322A2

公开(公告)日：2012-08-01

申请号：EP12165160.8

申请日：2009-12-18

申请人： Power Integrations, Inc.

发明人： Parthasarathy, Vijay ,  Banerjee, Sujit

IPC分类号： H01L29/739 ,  H01L21/263 ,  H01L29/32 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/407 ,  H01L29/66348

摘要： In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift region that adjoins a top surface of the buffer layer, and a body region. The body region separates the first region from the drift region. First and second dielectric regions respectively adjoin opposing lateral sidewall portions of the drift region. The dielectric regions extend in a vertical direction from at least just beneath the body region down at least into the buffer layer. First and second field plates are respectively disposed in the first and second dielectric regions. A trench gate that controls forward conduction is disposed above the dielectric region adjacent to and insulated from the body region.

公开(公告)号：EP2058846A1

公开(公告)日：2009-05-13

申请号：EP09150636.0

申请日：2007-01-19

申请人： Infineon Technologies Austria AG

发明人： Schulze, Hans-Joachim ,  Strack, Helmut ,  Mauder, Anton

IPC分类号： H01L21/322 ,  H01L21/265 ,  H01L21/263

CPC分类号： H01L21/3225 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/32 ,  H01L29/66704 ,  H01L29/66727 ,  H01L29/861

摘要： Beschrieben wird ein Verfahren zur Herstellung einer n-dotierten Zone in einem Halbleiterwafer unter Verwendung einer Ionenimplantation und ein vertikales Halbleiterbauelement.

摘要翻译： 该方法涉及通过相对另一侧（102）的一侧（101），“通过另一半导体区域（104和后面侧）通过的半导体区域（103）”邻接前侧。 晶片的后面侧照射高能量的粒子，由此产生的晶体缺陷在半导体区域后面。 热过程中进行，其中晶片被加热到七个和11摄氏度之间百摄氏度百温度。 因此独立权利要求中包括了以下内容：对于绝缘体上的基板的硅，其涉及使两个半导体晶片（2）的制造方法在半导体晶片上的正赋予区，它涉及照明的生产（1）的方法 晶片上用质子（3）的垂直功率半导体器件，其具有半导体主体和半导体基板上的两侧中的一侧。