发明公开
EP3053166A4 TWO TRANSISTOR TERNARY RANDOM ACCESS MEMORY
审中-公开
TERNÄERZWEI-TRANSISTOR-DIREKTZUGRIFFSSPEICHER
- 专利标题: TWO TRANSISTOR TERNARY RANDOM ACCESS MEMORY
- 专利标题(中): TERNÄERZWEI-TRANSISTOR-DIREKTZUGRIFFSSPEICHER
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申请号: EP14847884申请日: 2014-09-30
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公开(公告)号: EP3053166A4公开(公告)日: 2017-05-10
- 发明人: TSAOUSSIS SIMON PETER
- 申请人: RANGEL TSAOUSSIS AND TECH LLC
- 专利权人: RANGEL TSAOUSSIS AND TECH LLC
- 当前专利权人: RANGEL TSAOUSSIS AND TECH LLC
- 优先权: US201361884613 2013-09-30
- 主分类号: G11C11/39
- IPC分类号: G11C11/39 ; G11C11/411
摘要:
A two transistor ternary random access memory (TTTRAM) circuit includes an voltage/current input, an input/output switch, a first transistor, a first pull up resistor, a second transistor, and a second pull up resistor. The first transistor has a first emitter, a first collector connected to the input/output switch, and a first base. The first pull up resistor is connected to the first emitter and the voltage/current input. The second transistor has a second emitter connected to ground, a second collector, and a second base connected to the input/output switch. The second pull up resistor is connected to the first base, the second collector, and the voltage/current input.
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