发明公开
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： EP13874852.0申请日： 2013-11-08
-
公开(公告)号： EP3067920A1公开(公告)日： 2016-09-14
- 发明人: USAMI, Tatsuya , MIURA, Yukio , TSUCHIYA, Hideaki
- 申请人： Renesas Electronics Corporation
- 申请人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 代理机构： Addiss, John William
- 国际公布： WO2015068251 20150514
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; H01L21/768
摘要：
A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.
公开/授权文献
- EP3067920B1 SEMICONDUCTOR DEVICE 公开/授权日：2021-01-13
信息查询
IPC分类:
