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公开(公告)号：EP3809451A1
公开(公告)日：2021-04-21
申请号：EP20213902.8
申请日：2013-11-08
发明人： USAMI, Tatsuya , MIURA, Yukio , TSUCHIYA, Hideaki
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.
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公开(公告)号：EP3389089A1
公开(公告)日：2018-10-17
申请号：EP18165717.2
申请日：2018-04-04
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L24/13 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L23/49811 , H01L23/49816 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/02206 , H01L2224/02215 , H01L2224/0345 , H01L2224/0362 , H01L2224/03912 , H01L2224/0401 , H01L2224/05014 , H01L2224/05022 , H01L2224/05083 , H01L2224/05124 , H01L2224/05166 , H01L2224/05184 , H01L2224/05186 , H01L2224/05555 , H01L2224/05572 , H01L2224/05573 , H01L2224/05582 , H01L2224/05647 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/11901 , H01L2224/13005 , H01L2224/13014 , H01L2224/13022 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/14131 , H01L2224/14133 , H01L2224/1601 , H01L2224/16013 , H01L2224/16058 , H01L2224/16112 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/1713 , H01L2224/73204 , H01L2224/81048 , H01L2224/81191 , H01L2224/81193 , H01L2224/814 , H01L2224/81455 , H01L2224/81815 , H01L2224/8191 , H01L2224/83192 , H01L2224/83862 , H01L2224/92125 , H01L2224/94 , H01L2924/15311 , H01L2924/15313 , H01L2924/3512 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/014 , H01L2924/01047 , H01L2924/0103 , H01L2924/01029 , H01L2924/01028 , H01L2924/01083 , H01L2924/01051 , H01L2924/206 , H01L2924/207 , H01L2924/04941 , H01L2224/1146 , H01L2224/47
摘要： There is a need to improve reliability of the semiconductor device.
A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h 1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h 2 of the solder layer is measured from the upper surface of the resist layer. Thickness h 1 is greater than or equal to a half of thickness h 2 and is smaller than or equal to thickness h 2 .-
公开(公告)号：EP3067920A1
公开(公告)日：2016-09-14
申请号：EP13874852.0
申请日：2013-11-08
发明人： USAMI, Tatsuya , MIURA, Yukio , TSUCHIYA, Hideaki
IPC分类号： H01L21/321 , H01L21/768
CPC分类号： H01L23/528 , H01L21/02074 , H01L21/02126 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/263 , H01L21/265 , H01L21/3105 , H01L21/31144 , H01L21/321 , H01L21/768 , H01L21/76802 , H01L21/76807 , H01L21/76808 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76859 , H01L21/76879 , H01L21/76883 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.
摘要翻译： 半导体器件包括层间绝缘膜INS2，在层间绝缘膜INS2中形成的相邻Cu布线M1W以及与层间绝缘膜INS2的表面和Cu布线M1W和盖的表面接触的绝缘阻挡膜BR1 层间绝缘膜INS2和Cu布线M1W。 在相邻的Cu布线M1W之间，层间绝缘膜INS2在其表面具有损伤层DM1，在比损伤深的位置具有比损伤层DM1的氮浓度高的氮浓度的电场缓和层ER1 层DM1。
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公开(公告)号：EP3940771A1
公开(公告)日：2022-01-19
申请号：EP21183514.5
申请日：2021-07-02
IPC分类号： H01L23/485 , H01L23/498 , H01L23/31
摘要： A semiconductor device includes a package substrate, a semiconductor chip and a solder bump. The semiconductor chip is disposed on the package substrate. The package substrate includes a first electrode pad, and a first insulating film formed such that the first insulating film exposes a first portion of a surface of the first electrode pad. The semiconductor chip includes a second electrode pad and a second insulating film formed such that the second insulating film exposes a second portion of a surface of the second electrode pad. The second electrode pad is formed on the first electrode pad through the solder bump. L2/L1 is 0.63 or more in a cross section passing through the first electrode pad, the solder bump and the second electrode pad. A first length of the first portion and a second length of the second portion are defined as L1 and L2, respectively.
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公开(公告)号：EP2975647B1
公开(公告)日：2018-05-23
申请号：EP15175414.0
申请日：2015-07-06
IPC分类号： H01L29/778 , H01L21/336 , H01L29/417 , H01L29/20 , H01L29/40 , H01L29/45 , H01L29/423
CPC分类号： H01L29/7787 , H01L23/528 , H01L23/53223 , H01L27/0605 , H01L27/088 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/41766 , H01L29/4236 , H01L29/452 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： To enhance electromigration resistance of an electrode. A drain electrode (DE) is partially formed on a side surface of a drain pad (DP). In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion (DRE) is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).
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公开(公告)号：EP2975647A1
公开(公告)日：2016-01-20
申请号：EP15175414.0
申请日：2015-07-06
IPC分类号： H01L29/778 , H01L21/336 , H01L29/417 , H01L29/20 , H01L29/40 , H01L29/45 , H01L29/423
CPC分类号： H01L29/7787 , H01L23/528 , H01L23/53223 , H01L27/0605 , H01L27/088 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/41766 , H01L29/4236 , H01L29/452 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： To enhance electromigration resistance of an electrode.
A drain electrode (DE) is partially formed on a side surface of a drain pad (DP). In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion (DRE) is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).摘要翻译： 增强电极的抗电迁移性。 漏极（DE）部分形成在漏极垫（DP）的侧表面上。 在这种情况下，漏电极与漏极焊盘集成并且从漏极焊盘的侧表面沿第一方向（y方向）延伸。 凹入部分（DRE）在平面图中位于与漏电极重叠的区域中。 漏电极的至少一部分埋入凹部。 凹入部分的面对漏极焊盘的侧表面沿第一方向（y方向）进入漏极焊盘。
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