发明公开
EP3072939A1 NANOPLATELETS AND HIGH TEMPERATURE PROCESS FOR MANUFACTURE THEREOF
审中-公开
NANOPLÄTTCHENUND HOCHTEMPERATURVERFAHREN ZUR HERSTELLUNG DAVON
- 专利标题： NANOPLATELETS AND HIGH TEMPERATURE PROCESS FOR MANUFACTURE THEREOF
- 专利标题（中）： NANOPLÄTTCHENUND HOCHTEMPERATURVERFAHREN ZUR HERSTELLUNG DAVON
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申请号： EP15177403.1申请日： 2015-07-17
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公开(公告)号： EP3072939A1公开(公告)日： 2016-09-28
- 发明人: HEUCLIN, Hadrien , NADAL, Brice
- 申请人： Nexdot
- 申请人地址： 10, rue Vauquelin 75005 Paris FR
- 专利权人： Nexdot
- 当前专利权人： Nexdot
- 当前专利权人地址： 10, rue Vauquelin 75005 Paris FR
- 代理机构： Icosa
- 优先权： US201562139150P 20150327
- 主分类号： C09K11/02
- IPC分类号： C09K11/02 ; C09K11/56 ; C09K11/88 ; G01N33/58
摘要：
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein after ligand exchange reaction the population exhibits a quantum yield decrease of less than 50%.The present invention also relates to a high temperature growing process for manufacturing said nanoplatelets.
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