摘要:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.
摘要:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.
摘要:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.
摘要:
The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein after ligand exchange reaction the population exhibits a quantum yield decrease of less than 50%.The present invention also relates to a high temperature growing process for manufacturing said nanoplatelets.