发明公开
EP3084840A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
审中-公开
具有差异化P型和N型区域架构的太阳能电池发射器区域制造
- 专利标题: SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
- 专利标题(中): 具有差异化P型和N型区域架构的太阳能电池发射器区域制造
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申请号: EP14871735.8申请日: 2014-12-12
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公开(公告)号: EP3084840A1公开(公告)日: 2016-10-26
- 发明人: RIM, Seung Bum , SMITH, David D. , QIU, Taiqing , WESTERBERG, Staffan , TRACY, Kieran Mark , BALU, Venkatasubramani
- 申请人: SunPower Corporation
- 申请人地址: 77 Rio Robles San Jose, CA 95134 US
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: 77 Rio Robles San Jose, CA 95134 US
- 代理机构: Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权: US201314136751 20131220
- 国际公布: WO2015094987 20150625
- 主分类号: H01L31/049
- IPC分类号: H01L31/049
摘要:
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
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