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    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
    2.
    发明公开
    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
    具有差异化P型和N型区域架构的太阳能电池发射器区域制造

    公开(公告)号：EP3084840A1

    公开(公告)日：2016-10-26

    申请号：EP14871735.8

    申请日：2014-12-12

    申请人： SunPower Corporation

    发明人： RIM, Seung Bum ,  SMITH, David D. ,  QIU, Taiqing ,  WESTERBERG, Staffan ,  TRACY, Kieran Mark ,  BALU, Venkatasubramani

    IPC分类号： H01L31/049

    摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

    摘要翻译： 描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的衬底。 第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。 第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。 第三薄介电层横向地设置在第一多晶硅发射区和第二多晶硅发射区之间。 第一导电接触结构设置在第一多晶硅发射区上。 第二导电接触结构设置在第二多晶硅发射区上。