发明公开
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： HALBLEITERBAUELEMENT
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申请号： EP14882078申请日： 2014-09-08
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公开(公告)号： EP3107123A4公开(公告)日： 2017-02-22
- 发明人: KIMURA KEISUKE , KAMEYAMA SATORU
- 申请人： TOYOTA MOTOR CO LTD
- 专利权人： TOYOTA MOTOR CO LTD
- 当前专利权人： TOYOTA MOTOR CO LTD
- 优先权： JP2014023867 2014-02-10
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/336 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/739 ; H01L29/78 ; H01L29/861
摘要：
A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.
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IPC分类:
