公开(公告)号：EP3107123A4

公开(公告)日：2017-02-22

申请号：EP14882078

申请日：2014-09-08

申请人： TOYOTA MOTOR CO LTD

发明人： KIMURA KEISUKE ,  KAMEYAMA SATORU

IPC分类号： H01L27/04 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/7397 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/861

摘要： A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

摘要翻译： 本发明提供一种半导体装置，其具备设置有IGBT的主IGBT区域，设置有二极管的主二极管区域，设置有IGBT的检测IGBT区域和设置有二极管的检测二极管区域。 本体区域和阳极区域之间的间隙长于本体区域和阳极区域之间的n型区域中的电子迁移率和电子寿命的乘积。 感测二极管区域侧上的集电极区域的端部和体区域之间的间隙比端部和体区域之间的n型区域中的电子迁移率和电子寿命的乘积长。

公开(公告)号：EP3171410A4

公开(公告)日：2017-07-26

申请号：EP15821742

申请日：2015-05-18

申请人： TOYOTA MOTOR CO LTD

发明人： KAMEYAMA SATORU ,  IWASAKI SHINYA

IPC分类号： H01L29/78 ,  H01L27/04 ,  H01L29/08 ,  H01L29/739 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L27/0664 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868

摘要： An influence of a gate interference is suppressed and a reverse recovery property of a diode is improved. A diode includes a diode region located between the first boundary trench and the second boundary trench and a first and second IGBT regions. An emitter region and a body region are provided in each of the first and second IGBT regions. Each body region includes a body contact portion. An anode region is provided in the diode region. The anode region includes an anode contact portion. An interval between the first and second boundary trenches is equal to or longer than 200 µm. An area ratio of the anode contact portion in the diode region is lower than each of an area ratio of the body contact portion in the first IGBT region and an area ratio of the body contact portion in the second IGBT region.

摘要翻译： 栅极干扰的影响被抑制并且二极管的反向恢复特性得到改善。 二极管包括位于第一边界沟槽和第二边界沟槽之间的二极管区域以及第一和第二IGBT区域。 在第一和第二IGBT区域中的每一个中设置发射极区域和本体区域。 每个身体区域包括身体接触部分。 在二极管区域中提供阳极区域。 阳极区域包括阳极接触部分。 第一和第二边界沟槽之间的间隔等于或大于200μm。 二极管区域中的阳极接触部分的面积比低于第一IGBT区域中的体接触部分的面积比和第二IGBT区域中的体接触部分的面积比率中的每一个。

公开(公告)号：EP3107117A4

公开(公告)日：2016-12-21

申请号：EP14882050

申请日：2014-09-08

申请人： TOYOTA MOTOR CO LTD

发明人： KAMEYAMA SATORU ,  IWASAKI SHINYA ,  HORIUCHI YUKI ,  OKI SHUHEI

IPC分类号： H01L21/329 ,  H01L21/265 ,  H01L21/336 ,  H01L27/04 ,  H01L29/36 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L27/0664 ,  H01L21/02675 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/425 ,  H01L21/8222 ,  H01L27/0629 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0839 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/8611

摘要： A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region 38 measured along a thickness direction of the semiconductor substrate 12, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance "a" from the surface to the depth having the local maximum value N1 is larger than twice a distance "b" from the depth having the local maximum value N1 to the depth having the local minimum N2.