发明公开
EP3108498A1 SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
审中-公开
HALBLEITERSTRUKTUREN麻醉师T-FÖRMIGENELEKTRODEN
- 专利标题： SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
- 专利标题（中）： HALBLEITERSTRUKTUREN麻醉师T-FÖRMIGENELEKTRODEN
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申请号： EP15703217.8申请日： 2015-01-29
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公开(公告)号： EP3108498A1公开(公告)日： 2016-12-28
- 发明人: HWANG, Kiuchul , SHAW, Dale M. , WILLIAMS, Adrian D.
- 申请人： Raytheon Company
- 申请人地址： 870 Winter Street, Waltham, MA 02451-1449 US
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： 870 Winter Street, Waltham, MA 02451-1449 US
- 代理机构： Carpmaels & Ransford LLP
- 优先权： US201414184793 20140220
- 国际公布： WO2015126588 20150827
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/423 ; H01L21/285
摘要：
A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid, dielectric, such as air.
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