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    SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
    6.
    发明公开
    SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES 审中-公开
    HALBLEITERSTRUKTUREN麻醉师T-FÖRMIGENELEKTRODEN

    公开(公告)号：EP3108498A1

    公开(公告)日：2016-12-28

    申请号：EP15703217.8

    申请日：2015-01-29

    申请人： Raytheon Company

    发明人： HWANG, Kiuchul ,  SHAW, Dale M. ,  WILLIAMS, Adrian D.

    IPC分类号： H01L21/28 ,  H01L29/423 ,  H01L21/285

    CPC分类号： H01L21/28114 ,  H01L21/283 ,  H01L21/28587 ,  H01L29/42316

    摘要： A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid, dielectric, such as air.

    摘要翻译： 一种具有T形电极的半导体结构。 电极具有从顶部到衬底表面延伸的顶部和较窄的杆部分。 固体电介质层具有与电极杆的下部的侧壁并排并邻接的侧部。 顶部的底表面通过非固体，电介质（例如空气）与上表面部分间隔开。

    FIELD EFFECT TRANSISTOR
    7.
    发明公开
    FIELD EFFECT TRANSISTOR 有权
    场效应晶体管

    公开(公告)号：EP1749313A2

    公开(公告)日：2007-02-07

    申请号：EP05763892.6

    申请日：2005-05-19

    申请人： Raytheon Company

    发明人： HWANG, Kiuchul

    IPC分类号： H01L21/8252 ,  H01L27/095

    CPC分类号： H01L21/8252 ,  H01L27/095

    摘要： A semiconductor structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. An enhancement mode transistor device InGaP etch stop/Schottky contact layer is disposed over a channel layer; a first layer different from InGaP disposed on the InGaP layer; a depletion mode transistor device etch stop layer is disposed on the first layer; and a second layer disposed on the depletion mode transistor device etch stop layer. The depletion mode transistor device has a gate recess passing through the second layer and the depletion mode transistor device etch stop layer and terminating in the first layer. The enhancement mode transistor device has a gate recess passing through the second layer, the depletion mode transistor device etch stop layer, the first layer, and terminating in the InGaP layer.