发明公开
- 专利标题： STRAIN COMPENSATION IN TRANSISTORS
- 专利标题（中）： 透镜中的透射测量
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申请号： EP14886927.4申请日： 2014-03-28
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公开(公告)号： EP3123514A1公开(公告)日： 2017-02-01
- 发明人: LE, Van H. , CHU-KUNG, Benjamin , KAVALIEROS, Jack T. , PILLARISETTY, Ravi , RACHMADY, Willy , KENNEL, Harold W.
- 申请人： Intel Corporation
- 申请人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 代理机构： Goddar, Heinz J.
- 国际公布： WO2015147851 20151001
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/20
摘要：
An embodiment includes a device comprising: a first epitaxial layer, coupled to a substrate, having a first lattice constant; a second epitaxial layer, on the first layer, having a second lattice constant; a third epitaxial layer, contacting an upper surface of the second layer, having a third lattice constant unequal to the second lattice constant; and an epitaxial device layer, on the third layer, including a channel region; wherein (a) the first layer is relaxed and includes defects, (b) the second layer is compressive strained and the third layer is tensile strained, and (c) the first, second, third, and device layers are all included in a trench. Other embodiments are described herein.
公开/授权文献
- EP3123514B1 STRAIN COMPENSATION IN TRANSISTORS 公开/授权日：2022-12-21
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