发明公开
EP3123522A1 MULTIPLEXOR LOGIC FUNCTIONS IMPLEMENTED WITH CIRCUITS HAVING TUNNELING FIELD EFFECT TRANSISTORS (TFETS) 审中-公开
MIT SCHALTUNGEN MIT TUNNELFELDEFFEKTTRANSISTOREN(TFETS)实施物流多功能一体机

  • 专利标题: MULTIPLEXOR LOGIC FUNCTIONS IMPLEMENTED WITH CIRCUITS HAVING TUNNELING FIELD EFFECT TRANSISTORS (TFETS)
  • 专利标题(中): MIT SCHALTUNGEN MIT TUNNELFELDEFFEKTTRANSISTOREN(TFETS)实施物流多功能一体机
  • 申请号: EP14886843.3
    申请日: 2014-03-27
  • 公开(公告)号: EP3123522A1
    公开(公告)日: 2017-02-01
  • 发明人: MORRIS, Daniel H.AVCI, Uygar E.RIOS, RafaelYOUNG, Ian A.
  • 申请人: Intel Corporation
  • 申请人地址: 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95054 US
  • 专利权人: Intel Corporation
  • 当前专利权人: Intel Corporation
  • 当前专利权人地址: 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95054 US
  • 代理机构: Goddar, Heinz J.
  • 国际公布: WO2015147832 20151001
  • 主分类号: H01L29/88
  • IPC分类号: H01L29/88 H01L29/78 H01L21/336
MULTIPLEXOR LOGIC FUNCTIONS IMPLEMENTED WITH CIRCUITS HAVING TUNNELING FIELD EFFECT TRANSISTORS (TFETS)
摘要:
Multiplexor circuits with Tunneling field effect transistors (TFET) devices are described. For example, a multiplexor circuit includes a first set of tunneling field effect transistor (TFET) devices that are coupled to each other. The first set of TFET devices receive a first data input signal, a first select signal, and a second select signal. A second set of TFET devices are coupled to each other and receive a second data input signal, the first select signal, and the second select signal. An output terminal is coupled to the first and second set of TFETs. The output terminal generates an output signal of the multiplexor circuit.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/86 ..只能通过对一个或多个通有待整流,放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的(H01L29/96优先)
H01L29/861 ...二极管
H01L29/88 ....隧道效层二极管
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