发明公开
EP3147951A1 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
审中-公开
苏格兰赫尔维尼HERSTELLUNGSVERFAHREN HALBLEITERBAUEMENT
- 专利标题： SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
- 专利标题（中）： 苏格兰赫尔维尼HERSTELLUNGSVERFAHREN HALBLEITERBAUEMENT
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申请号： EP16190402.4申请日： 2016-09-23
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公开(公告)号： EP3147951A1公开(公告)日： 2017-03-29
- 发明人: LI, Yong
- 申请人： Semiconductor Manufacturing International Corporation (Shanghai) , Semiconductor Manufacturing International Corporation (Beijing)
- 申请人地址： No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 CN
- 专利权人： Semiconductor Manufacturing International Corporation (Shanghai),Semiconductor Manufacturing International Corporation (Beijing)
- 当前专利权人： Semiconductor Manufacturing International Corporation (Shanghai),Semiconductor Manufacturing International Corporation (Beijing)
- 当前专利权人地址： No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 CN
- 代理机构： Klunker IP
- 优先权： CN201510618058 20150925
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8238 ; H01L21/228 ; H01L21/225
摘要：
A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor structure that comprises a substrate and a first fin member, wherein the first fin member is connected to the substrate and comprises a first semiconductor portion; providing a first-type dopant member that directly contacts the first semiconductor portion, comprises first-type dopants, and is at least one of liquid and amorphous; and performing heat treatment on at least one of the first-type dopant member and the first semiconductor portion to enable a first portion of the first-type dopants to diffuse through a first side of the first-type dopant member into the first semiconductor portion.
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