公开(公告)号：EP3246954B1

公开(公告)日：2020-06-03

申请号：EP15877668.2

申请日：2015-12-08

申请人： Suzhou Talesun Solar Technologies Co., LTD.

发明人： WEI, Qingzhu ,  LU, Junyu ,  LIAN, Weifei ,  NI, Zhichun

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L21/228

公开(公告)号：EP3147951A1

公开(公告)日：2017-03-29

申请号：EP16190402.4

申请日：2016-09-23

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： LI, Yong

IPC分类号： H01L29/66 ,  H01L21/8238 ,  H01L21/228 ,  H01L21/225

CPC分类号： H01L21/228 ,  H01L21/02123 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/823821 ,  H01L29/0684 ,  H01L29/66537 ,  H01L29/66803

摘要： A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor structure that comprises a substrate and a first fin member, wherein the first fin member is connected to the substrate and comprises a first semiconductor portion; providing a first-type dopant member that directly contacts the first semiconductor portion, comprises first-type dopants, and is at least one of liquid and amorphous; and performing heat treatment on at least one of the first-type dopant member and the first semiconductor portion to enable a first portion of the first-type dopants to diffuse through a first side of the first-type dopant member into the first semiconductor portion.

摘要翻译： 半导体器件的制造方法可以包括以下步骤：制备包括基板和第一翅片构件的半导体结构，其中所述第一翅片构件连接到所述基板并且包括第一半导体部分; 提供直接接触所述第一半导体部分的第一类型掺杂剂构件，包括第一类型掺杂剂，并且是液体和无定形中的至少一种; 以及对所述第一类型掺杂剂构件和所述第一半导体部分中的至少一个执行热处理，以使得所述第一类型掺杂剂的第一部分能够通过所述第一类型掺杂剂构件的第一侧扩散到所述第一半导体部分中。

公开(公告)号：EP2573800A4

公开(公告)日：2014-11-26

申请号：EP11783206

申请日：2011-04-12

申请人： TOKYO OHKA KOGYO CO LTD

发明人： MUROTA ATSUSHI ,  HIRAI TAKAAKI

IPC分类号： H01L21/22 ,  H01L21/225 ,  H01L21/228 ,  H01L31/04

CPC分类号： H01L21/2225 ,  H01L21/18 ,  H01L21/182 ,  H01L21/228 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The disclosed diffusion agent composition is used in the formation of an impurity diffusion agent layer on a semiconductor substrate, and contains (A) an impurity diffusion component, (B) a silicon compound, and (C) a solvent containing (C1) a solvent with a boiling point of 100C or less, (C2) a solvent with a boiling point of 120-180C, and a (C3) solvent with a boiling point of 240-300C.

摘要翻译： 所公开的扩散剂组合物用于在半导体衬底上形成杂质扩散剂层，并且包含（A）杂质扩散组分，（B）硅化合物，和（C）含有（C1）溶剂的溶剂 沸点为100℃以下，（C2）沸点为120-180℃的溶剂和沸点为240-300℃的（C3）溶剂。

公开(公告)号：EP2612348A1

公开(公告)日：2013-07-10

申请号：EP11757199.2

申请日：2011-08-19

申请人： Evonik Degussa GmbH

发明人： WIEBER, Stephan ,  PATZ, Matthias ,  STÜGER, Harald ,  LEHMKUHL, Jasmin

IPC分类号： H01L21/228 ,  H01L21/02 ,  C07F9/50 ,  H01L31/18 ,  C23C18/12

CPC分类号： H01L21/02381 ,  C23C18/1204 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/14 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/228 ,  H01L29/16 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing p-doped silicon layers, in particular silicon layers which are produced from liquid silane-containing formulations. The invention also relates to a substrate coated with a p-doped silicon layer. The invention further relates to the use of certain dopants based on boron compounds for p-doping a silicon layer.

摘要翻译： 本发明涉及一种用于生产p掺杂硅层的方法，特别是由含有液态硅烷的制剂制备的那些硅层。 本发明还涉及涂覆有p掺杂硅层的衬底。 本发明另外涉及基于硼化合物的特定掺杂剂用于硅层的p掺杂的用途。

公开(公告)号：EP2502262A1

公开(公告)日：2012-09-26

申请号：EP10776681.8

申请日：2010-11-10

申请人： Evonik Degussa GmbH

发明人： STÜTZEL, Bernhard ,  FAHRNER, Wolfgang

IPC分类号： H01L21/228 ,  H01L21/02

CPC分类号： H01L21/228 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02667 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) applying electromagnetic and/or thermal energy, wherein an at least partially polymorphic silicon layer is obtained, (d) providing a liquid preparation comprising at least one metal complex compound comprising aluminum, (e) applying said preparation to the silicon layer obtained in step (c), and subsequently (f) heating the coating obtained in step (e) by applying electromagnetic and/or thermal energy, wherein the preparation obtained in step (d) breaks down at least to metal and hydrogen, and subsequently (g) cooling the coating obtained according to step (f), wherein a silicon layer doped with Al or Al and metal is obtained, to doped silicon coatings that can be obtained according to the method, and to the use thereof for producing light-sensitive elements and electronic components.

摘要翻译： 本发明涉及一种用于制造在衬底一个掺杂的硅层，其包括：（a）提供液体硅烷制剂和基片的步骤，（b）将所述液体硅烷配制剂的底物，（c）将电磁 和/或热能，以获得用于至少部分地多晶型硅层，（d）提供液体制剂，其包含至少一种含铝金属配合物，（e）将本制剂在步骤（c）中获得的硅层和 然后（f）将至少对金属和氢，然后（克）引入电磁和/或热能量，其分解后，步骤（d）中获得的制剂冷却涂层获得AfterStep的加热后步骤（e）中得到的涂层 （F），以获得Al掺杂或Al和金属掺杂的硅层，通过所述方法和它们的用途为生产光敏元件和电子元件到掺杂硅层可获得的。

公开(公告)号：EP3418263B1

公开(公告)日：2022-05-25

申请号：EP18175433.4

申请日：2018-05-31

发明人： LIMB, Scott J.

IPC分类号： C03C21/00 ,  H01L21/78 ,  C03C15/00 ,  H01L21/02 ,  H01L21/228 ,  H01L23/00

公开(公告)号：EP2612348B1

公开(公告)日：2017-11-29

申请号：EP11757199.2

申请日：2011-08-19

申请人： Evonik Degussa GmbH

发明人： WIEBER, Stephan ,  PATZ, Matthias ,  STÜGER, Harald ,  LEHMKUHL, Jasmin

IPC分类号： H01L21/228 ,  H01L21/02 ,  C07F9/50 ,  H01L31/18 ,  C23C18/12

CPC分类号： H01L21/02381 ,  C23C18/1204 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/14 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/228 ,  H01L29/16 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP3246954A1

公开(公告)日：2017-11-22

申请号：EP15877668.2

申请日：2015-12-08

申请人： Suzhou Talesun Solar Technologies Co., LTD.

发明人： WEI, Qingzhu ,  LU, Junyu ,  LIAN, Weifei ,  NI, Zhichun

IPC分类号： H01L31/18 ,  H01L31/068 ,  H01L31/0352 ,  H01L31/0216 ,  H01L21/228

摘要： Provided is a manufacturing method for an N-type double-sided battery. The method comprises the following steps: S1, performing texturing treatment; S2, evenly coating a boron source on the upper surface of an N-type silicon wafer in a spin coating or silk-screen printing manner, and conducting boron diffusion in a furnace tube; S3, manufacturing a mask; S4, conducting phosphorus diffusion on the lower surface of the N-type silicon wafer, and forming a high-low-junction structure on the lower surface; S5, removing phosphorosilicate glass and the mask that is manufactured in step S3; S6, manufacturing a passivation anti-reflection film made from aluminum oxide and silicon nitride on the surface of the diffused boron, and manufacturing a silicon nitride passivation anti-reflection film on the surface of the diffused phosphorus; and S7, manufacturing an electrode. The manufacturing method for the N-type double-sided battery is simple in process, and effectively improves the efficiency of the battery. In addition, also provided is an N-type double-sided battery. A passivation layer manufacturing method for the N-type double-sided battery is a low-temperature process, and does not damage a PN junction.

摘要翻译： 提供了一种用于N型双面电池的制造方法。 该方法包括以下步骤：S1，进行纹理化处理; S2，将硼源以旋涂或丝网印刷的方式均匀涂布在N型硅晶片的上表面，并在炉管内进行硼扩散; S3，制造面具; S4，在N型硅晶片的下表面进行磷扩散，并在下表面形成高低结结构; S5，去除磷硅酸盐玻璃和步骤S3中制造的掩模; S6，在扩散后的硼表面制备由氧化铝和氮化硅制成的钝化防反射膜，在扩散后的磷表面制备氮化硅钝化防反射膜; 和S7，制造电极。 该N型双面电池的制造方法工艺简单，有效地提高了电池的效率。 另外，还提供了一种N型双面电池。 用于N型双面电池的钝化层制造方法是低温工艺，并且不会损坏PN结。

公开(公告)号：EP2915186A2

公开(公告)日：2015-09-09

申请号：EP13850348.7

申请日：2013-11-05

申请人： Dynaloy, LLC

发明人： HOCHSTETLER, Spencer, Erich ,  POLLARD, Kimberly, Dona ,  MOODY, Leslie, Shane ,  MACKENZIE, Peter, Borden ,  LIU, Junjia

IPC分类号： H01L21/228

CPC分类号： C07F9/78 ,  C07F9/70 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

摘要： Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.

公开(公告)号：EP2319093A1

公开(公告)日：2011-05-11

申请号：EP09782220.9

申请日：2009-08-26

申请人： SCHOTT Solar AG

发明人： VAAS, Knut ,  SCHUM, Berthold ,  SCHMIDT, Wilfried ,  FRANKE, Dieter ,  SCHWIRTLICH, Ingo

IPC分类号： H01L31/18 ,  H01L21/228 ,  H01L21/318

CPC分类号： H01L21/316 ,  H01L21/228 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/6715 ,  H01L31/18

摘要： The invention relates to a method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, wherein the functional layer has a layer thickness d
1 and the liquid required for forming the functional layer having the thickness di has a layer thickness d
2 . In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d
3 where d
3 > d
2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d
2 or approximately the thickness d2.