- 专利标题： SILICON DIE WITH INTEGRATED HIGH VOLTAGE DEVICES
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申请号： EP14895326申请日： 2014-06-16
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公开(公告)号： EP3155654A4公开(公告)日： 2018-06-27
- 发明人: NELSON DONALD W , WEBB M CLAIR , MORROW PATRICK , JUN KIMIN
- 申请人： INTEL CORP , NELSON DON W , WEBB MILTON CLAIR , MORROW PATRICK , JUN KIMIN
- 专利权人： INTEL CORP,NELSON DON W,WEBB MILTON CLAIR,MORROW PATRICK,JUN KIMIN
- 当前专利权人： INTEL CORP,NELSON DON W,WEBB MILTON CLAIR,MORROW PATRICK,JUN KIMIN
- 优先权： US2014042576 2014-06-16
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/98 ; H01L25/065 ; H01L27/06 ; H01L29/78
摘要：
A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
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