The present invention is a wafer processing laminate including a support (3), a temporary adhesive material layer (2) formed on the support, and a wafer (1) stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, wherein the temporary adhesive material layer comprises a three-layered complex temporary adhesive material layer that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a thickness of less than 100 nm and releasably laminated to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B) releasably laminated to the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A') having a thickness of less than 100 nm, releasably laminated to the second temporary adhesive layer, and releasably laminated to the support. This wafer processing laminate can withstand a thermal process at a high temperature exceeding 300°C, and can increase productivity of thin wafers.