-
公开(公告)号：EP3859770B1
公开(公告)日：2024-11-06
申请号：EP19867010.1
申请日：2019-09-09
发明人： HASHIGAMI, Hiroshi
IPC分类号： H01L21/365 , H01L21/368 , H01L21/338 , H01L29/12 , H01L29/24 , H01L29/739 , H01L29/778 , H01L29/78 , H01L29/812 , H01L29/872 , H01L29/66 , H01L33/12 , H01L33/26 , H01L29/10
-
公开(公告)号：EP3611226B1
公开(公告)日：2024-11-06
申请号：EP18783911.3
申请日：2018-04-03
发明人： TANAKA Kenji , AOKI Shunji , HIROKAMI Munenao , YAMADA Tetsuro
IPC分类号： C08L83/07 , C08K5/103 , C08K5/5425 , C08L83/08 , C09D183/07 , C09D183/08 , C09J7/40 , C09K3/00 , C09D183/04
-
公开(公告)号：EP3878437B1
公开(公告)日：2024-10-23
申请号：EP21161863.2
申请日：2021-03-10
-
公开(公告)号：EP4443235A2
公开(公告)日：2024-10-09
申请号：EP24164620.7
申请日：2024-03-19
发明人： INAZUKI, Yukio , KOSAKA, Takuro , OGOSE, Taiga , MIMURA, Shohei
摘要： In a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorber film and a hard mask film, the protection film is composed of a material containing ruthenium (Ru), the absorber film consists of a first layer and a second layer, or a first layer, a second layer and a third layer, the first layer has a composition containing tantalum (Ta) and being free of nitrogen (N), the second layer has a composition containing tantalum (Ta) and nitrogen (N), the third layer has a composition containing tantalum (Ta), nitrogen (N) and oxygen (O), and the hard mask film is composed of a material containing chromium (Cr).
-
公开(公告)号：EP4442693A1
公开(公告)日：2024-10-09
申请号：EP22898316.9
申请日：2022-10-27
发明人： HIROKAMI, Munenao
IPC分类号： C07F7/18 , A01N55/10 , A01P1/00 , D06M13/513
CPC分类号： A01N55/00 , A01P3/00 , C07F7/18 , D06M13/513 , A01P1/00
摘要： This composition containing an organosilicon compound represented by formula (1) and an amino group-containing organosilicon compound can impart excellent washing durability and sustained antibacterial and antiviral performance to a synthetic fiber such as a polyester fiber.
(In the formula, R1 each independently represent a C1-C10 alkyl group or a C6-C10 aryl group, R2 each independently represent a C1-C10 alkyl group or a C6-C10 aryl group, R3 represents a C12-C24 alkyl group, R4 and R5 each independently represent a C1-C10 alkyl group, X represents a halogen atom, m represents an integer of 1-20, and n represents an integer of 1-3.)-
6.发明授权
公开(公告)号：EP3653680B1
公开(公告)日：2024-10-09
申请号：EP18831003.1
申请日：2018-06-13
IPC分类号： C09D183/04 , C09D4/00 , C09D5/02 , C09D7/40 , C08G77/16
CPC分类号： C09D4/00 , C09D5/022 , C09D7/63 , C09D183/04 , C08G77/16
-
公开(公告)号：EP4438630A1
公开(公告)日：2024-10-02
申请号：EP24167683.2
申请日：2024-03-28
摘要： Provided is a method of continuously producing a depolymerized cellulose ether that is space-saving and highly productive, and is capable of reducing adhesion of a cellulose ether powder body to reactors and producing a depolymerized cellulose ether with a suppressed degree of yellowness and contaminants. The method includes: bringing a raw material cellulose ether that is of a temperature of 3°C to less than 40°C and is continuously supplied from a raw material tank 1 to a moisture conditioning tank 2 into contact with a water vapor B to obtain a moisture-conditioned cellulose ether; heating the moisture-conditioned cellulose ether to obtain a heated cellulose ether; continuously bringing a gaseous hydrogen chloride into contact with the heated cellulose ether to obtain a depolymerized cellulose ether product; and mixing the depolymerized cellulose ether product with a basic compound to obtain a depolymerized cellulose ether.
-
8.发明公开
公开(公告)号：EP4435515A1
公开(公告)日：2024-09-25
申请号：EP24160203.6
申请日：2024-02-28
IPC分类号： G03F7/075
CPC分类号： G03F7/0752
摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol% or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
-
公开(公告)号：EP4432346A1
公开(公告)日：2024-09-18
申请号：EP22892599.6
申请日：2022-10-26
摘要： The present invention is a cover for a heat generating electronic component including a hollow structure having one or more openings for inserting an electronic circuit component, wherein an inner wall surface of the hollow structure has one or more protrusion portions. Thereby, a cover for a heat generating electronic component that can prevent detachment of the electronic component is provided.
-
-
-
-
-
-
-
-
-
搜索结果
7560 条记录 (耗时 0.037 秒)
