发明授权
- 专利标题： QUANTUM DOTS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME
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申请号： EP16196124.8申请日： 2016-10-27
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公开(公告)号： EP3168278B1公开(公告)日： 2018-08-01
- 发明人: MIN, Jihyun , JANG, Eun Joo , KIM, Yongwook , PARK, Garam
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677 KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： 129, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677 KR
- 代理机构： Mullen, Lee Bryan
- 优先权： KR20150150441 20151028
- 主分类号： C09K11/02
- IPC分类号： C09K11/02 ; C09K11/66 ; H01L51/50 ; C09K11/88 ; G02F1/00 ; B82Y20/00 ; C09K11/61 ; C08K3/16 ; H01L27/32 ; B82Y40/00
摘要：
A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Chemical Formula 1€ƒ€ƒ€ƒ€ƒ€ƒABX 3+± wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF 4 , or a combination thereof, and ± is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers
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