发明公开
- 专利标题： N-DOPED SEMICONDUCTING MATERIAL COMPRISING TWO METAL DOPANTS
- 专利标题（中）： 包含两种金属多元素的N掺杂半导体材料
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申请号： EP15193925.3申请日： 2015-11-10
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公开(公告)号： EP3168894A1公开(公告)日： 2017-05-17
- 发明人: Kalisz, Tomas , Cardinali, Francois , Garnier, Jerome , Gölfert, Uwe , Jankus, Vygintas , Rothe, Carsten , Schulze, Benjamin , Willmann, Steffen
- 申请人： Novaled GmbH
- 申请人地址： Tatzberg 49 01307 Dresden DE
- 专利权人： Novaled GmbH
- 当前专利权人： Novaled GmbH
- 当前专利权人地址： Tatzberg 49 01307 Dresden DE
- 代理机构： Bittner, Thomas L.
- 主分类号： H01L51/54
- IPC分类号： H01L51/54 ; H01L51/00
摘要：
The present invention relates to a semiconducting material comprising
(i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound,
(ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and
(iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te,
electronic devices comprising such materials and processes for preparing the same.
(i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound,
(ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and
(iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te,
electronic devices comprising such materials and processes for preparing the same.
公开/授权文献
- EP3168894B8 N-DOPED SEMICONDUCTING MATERIAL COMPRISING TWO METAL DOPANTS 公开/授权日：2023-07-26
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