A semiconductor device (100) is disclosed, comprising stack of a first metal layer (110), a first dielectric layer (120), a second metal layer (130),a second dielectric layer (140), and a third metal layer (150). Further, a magnetic tunnel junction, MTJ, device (160) is arranged in the first dielectric layer and the second metal layer and electrically connected to the first metal layer and the third metal layer. A method for manufacturing such as semiconductor device is also disclosed.