发明公开
- 专利标题： TWO DIMENSIONAL LAYERED MATERIAL QUANTUM WELL JUNCTION DEVICES
- 专利标题（中）： 二维层状材料量子阱结器件
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申请号： EP15836954.6申请日： 2015-07-30
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公开(公告)号： EP3186836A1公开(公告)日： 2017-07-05
- 发明人: AMANO, Jun
- 申请人： Konica Minolta Laboratory U.S.A., Inc.
- 申请人地址： 2855 Campus Dr. Suite 100 San Mateo, CA 94403 US
- 专利权人： Konica Minolta Laboratory U.S.A., Inc.
- 当前专利权人： Konica Minolta Laboratory U.S.A., Inc.
- 当前专利权人地址： 2855 Campus Dr. Suite 100 San Mateo, CA 94403 US
- 代理机构： Green, Mark Charles
- 优先权： US201462043196P 20140828
- 国际公布： WO2016032680 20160303
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.
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