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公开(公告)号:EP3186836A1
公开(公告)日:2017-07-05
申请号:EP15836954.6
申请日:2015-07-30
发明人: AMANO, Jun
IPC分类号: H01L29/06
CPC分类号: H01L31/035236 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/02485 , H01L21/02499 , H01L21/02502 , H01L21/02521 , H01L21/02568 , H01L29/122 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/861 , H01L31/03044 , H01L31/0324 , H01L31/035209 , H01L31/18 , H01L33/06 , H01L33/26 , Y02E10/544
摘要: A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.
摘要翻译: 量子阱器件包括设置在第一层和第二层之间的第一二维材料的第一层,第二二维材料的第二层以及第三二维材料的第三层。 第一层,第二层和第三层主要通过范德华力粘附。
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公开(公告)号:EP3186836B1
公开(公告)日:2019-04-17
申请号:EP15836954.6
申请日:2015-07-30
发明人: AMANO, Jun
IPC分类号: H01L29/12 , H01L29/861 , H01L33/06 , H01L31/18 , H01L31/0304 , H01L31/032 , H01L31/0352 , H01L33/26 , H01L33/32 , H01L21/02 , H01L29/20 , H01L29/267 , H01L29/24
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