发明公开
EP3201942A1 METHOD AND SYSTEM FOR MEASURING RADIATION AND TEMPERATURE EXPOSURE OF WAFERS ALONG A FABRICATION PROCESS LINE
审中-公开
用于测量制造工艺线上的晶片的辐射和温度暴露的方法和系统
- 专利标题： METHOD AND SYSTEM FOR MEASURING RADIATION AND TEMPERATURE EXPOSURE OF WAFERS ALONG A FABRICATION PROCESS LINE
- 专利标题（中）： 用于测量制造工艺线上的晶片的辐射和温度暴露的方法和系统
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申请号： EP15851269.9申请日： 2015-10-13
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公开(公告)号： EP3201942A1公开(公告)日： 2017-08-09
- 发明人: SUN, Mei , JENSEN, Earl , O'BRIEN, Kevin
- 申请人： KLA - Tencor Corporation
- 申请人地址： One Technology Drive Milpitas, California 95035 US
- 专利权人： KLA - Tencor Corporation
- 当前专利权人： KLA - Tencor Corporation
- 当前专利权人地址： One Technology Drive Milpitas, California 95035 US
- 代理机构： Keane, Paul Fachtna
- 优先权： US201462063657P 20141014; US201514880899 20151012
- 国际公布： WO2016061089 20160421
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.
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