发明公开
- 专利标题： HIGH QUALITY DEVICES GROWTH ON PIXELATED PATTERNED TEMPLATES
- 专利标题（中）： 高质量器件在像素化图案化模板上生长
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申请号： EP17163006.4申请日： 2011-11-07
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公开(公告)号： EP3214639A1公开(公告)日： 2017-09-06
- 发明人: WANG, Wang Nang
- 申请人： Nanogan Limited
- 申请人地址： 5-6 Northumberland Buildings Queen Square Bath BA1 2JE GB
- 专利权人： Nanogan Limited
- 当前专利权人： Nanogan Limited
- 当前专利权人地址： 5-6 Northumberland Buildings Queen Square Bath BA1 2JE GB
- 代理机构： Page Hargrave
- 优先权： GB201018788 20101108
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of producing a template material for growing semiconductor materials and / or devices, comprises the steps of:
(a) providing a substrate with a dielectric layer on the substrate; and
(b) forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures.
(a) providing a substrate with a dielectric layer on the substrate; and
(b) forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures.
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